Abstract
The dielectric properties of ceramics and thin films of Bi2(Zn1/3Nb2/3)2O7, BiZN, materials were examined in low frequency (1 kHz – 3 MHz), microwave frequency (0.5 – 10 GHz) and optical frequency (4×1011–7×1011 kHz) regimes. The dielectric properties in the optical frequency regime, (εr)op\\cong4.9–6.5, are insensitive to the material characteristics, implying that only the electronic polarization is functioning in this frequency regime. By contrast, the properties in the low frequency regime, (εr)lf\\cong160–300, are markedly influenced by the synthesis parameters, indicating that the dielectric properties in this regime are predominated by the ionic polarization process. Therefore, these properties vary with the crystallinity of the materials.
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