Abstract
We have probed the dopant activity of silicon B-doped by Gas Immersion Laser Doping (GILD). Here, we report on the comparison of optical, electrical and structural properties of Si:B, over a wide concentration range, up to 1.5×1021cm−3 by steps of 1.5×1019cm−3. Data obtained by reflectance FTIR spectroscopy are used within a Drude model to extract concentration, thickness and mobility. Resulting carrier concentration and conductivity are checked with 4-point probe electrical and X-ray diffraction measurements. FTIR proved to be very sensitive to the dopant distribution inside the layer, despite its thinness. It clearly reveals a moderate dopant accumulation at the interfaces.
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