Abstract
The indium-doped CdZnTe crystal was characterized by PL spectra at 10 K and IR transmission spectra, as well as its current–voltage behavior at room temperature. The results showed that indium atoms substituted for the Cd vacancy and produced ionized donors [In Cd] +, i.e. indium doping element recombined with [V cd] 2− and formed the singly negative defect complex A-center [ In Cd + V Cd 2 - ] - and the neutral ones [ 2 In Cd + V Cd 2 - ] 0 and [ In cd + ( In Cd + V Cd 2 - ) - ] 0 . Indium doping also increased the IR absorption of the CdZnTe crystal due to the lattice absorption and free-carrier absorption. Meanwhile, indium doping increased the electrical resistivity and decreased the leakage current of CdZnTe crystals remarkably.
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