Abstract
In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PH3. The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10−7 S/cm was obtained, which was suitable for the intermediate reflector layer.
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