Abstract
ABSTRACTWe deposited copper oxides by rf magnetron sputtering from a 4N Cu-target at room temperature, varying the oxygen flux and keeping the argon flow constant. Dependent on the oxygen flux Cu2O, Cu4O3or CuO were synthesized. The different compounds were characterized by XRD. The dielectric functions of the oxides were determined by spectroscopic ellipsometry and show significant differences between the compounds. The electrical properties, like the carrier concentration, of each compound can be tuned by adjusting the oxygen flux. We discuss the structural, optical and electrical properties of the copper oxides in terms of phase purity and stoichiometry deviations.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
