Abstract
An optical and electrical investigation of an asymmetric GaAs-AlGaAs-based double-barrier resonant-tunnelling structure containing a strained-layer InyGa1-yAs (y=0.11) quantum well region is reported. Photoluminescence (PL) and PL excitation (PLE) spectroscopies are employed to determine the variation of charge (ns) build-up in the quantum well as a function of applied bias. Very large values of ns, as high as 1*1012 cm-2, due to the thick collector barrier width of 130 AA employed, are deduced. The charge density results of the optical experiments are then used in Poisson equation simulations of the device. The results are found to account very well for the observed current-voltage characteristics of the structure. In particular the occurrence of inverted bistability, where the off-resonance current is greater than the on-resonance current over the whole range of the bistable region, is found to be consistent with the results of the device simulations.
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