Abstract
The effect of CdCl 2 treatment and the heat treatment for Cu diffusion were investigated in the CdTe thin film solar cells prepared by close-spaced sublimation (CSS) method. In the photoluminescence (PL) spectra of the CdCl 2-treated CdTe layer, 1.42 eV band related to V Cd–Cl defect complexes appeared. Capacitance–voltage ( C– V) measurements revealed that the acceptor concentration was maximized at the optimum CdCl 2 treatment temperature. Furthermore, a neutral-acceptor bound exciton line due to Cu acceptors was observed in the PL of the CdTe layer by the heat treatment for Cu diffusion. C– V characteristics and depth profile of PL spectrum implied that the heat treatment for Cu diffusion facilitated the formation of low resistance contacts to CdTe through formation of a heavily doped region in the CdTe near the back electrode, but Cu atoms did not act as effective acceptors in the CdTe layer except the region near the back electrode.
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