Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Marcelo R Piton,Helder V A Galeti,Y Galvao Gobato,Teemu Hakkarainen,S Souto,Mircea Guina,Eero Koivusalo,Andreas Schramm,Soile Suomalainen

doi:10.1109/sbmicro.2017.8113028

Optical and electrical characterization of Te and Be doped GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Marcelo R Piton, Helder V A Galeti + Show 7 more

https://doi.org/10.1109/sbmicro.2017.8113028

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Publication Date: Aug 1, 2017

Citations: 9

Affiliation: Tampere University, Universidade Federal de São Carlos, Universidade de São Paulo

#Self-catalyzed Molecular Beam Epitaxy #Doped GaAs Nanowires + Show 8 more

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Abstract

We have investigated optical and electrical properties of Te and Be doped GaAs nanowires (NW) grown by self-catalyzed molecular beam epitaxy. The NWs were grown on p-Si(111) substrates using a novel technique based on lithography-free Si/SiOx patterns fabricated by droplet epitaxy and spontaneous oxidation, which allows synthesis of highly uniform NWs with controllable size and density. The incorporation of Be- and Te-dopants in GaAs NWs was investigated by using transport, photoluminescence (PL) and Raman spectroscopy techniques.

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