Abstract
In0.53Ga0.47BixAs1−x films were grown on InP:Fe substrates by molecular beam epitaxy, with Bi concentrations up to x = 3.60%. Bi content in the epilayers was determined by Rutherford backscattering spectroscopy, and channeling measurements show Bi incorporating substitutionally. Unlike previous work, electrical and optical data are obtained for all samples. A redshift in peak wavelength of about 56 meV/%Bi was observed using spectrophotometry. The valence band anti-crossing model is applied, showing InyGa1−yBixAs1−x lattice-matched to InP is possible by varying the composition, with a theoretical cutoff wavelength of about 6 μm.
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