Abstract
Cu(In,Ga)S2 solar cells with different absorber layer thicknesses prepared by means of a three-stage co-evaporation process are investigated to determine the electrical losses depending on the absorber layer thickness. The absorber material is characterized by energy dispersive X-ray spectroscopy, time of flight secondary ion mass spectroscopy and optical transmission and reflectance measurements. The acceptor concentration is determined admittance spectroscopy in the range of 8.4·1015cm−3 to 3.8 ·1016cm−3. From external quantum efficiency and current–voltage-measurements combined with the determined absorption coefficient we attribute the losses in the short circuit current density to incomplete absorption.
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