Abstract
We investigated the optical and the electrical properties of Al-doped ZnO (AZO) films grown on c-plane sapphire by varying the growth temperature in an atomic layer deposition system. High-resolution x-ray ω/2θ scans revealed that the (002) peak of the AZO film was clearly developed with increasing growth temperature from 115°C to 235°C. From a surface analysis, we found that the surface grain size of the AZO film increased with growth temperature. In addition, the minimal resistivity (1.21 × 10−3 Ω·cm) and the maximum mobility (19.32 cm2/v-s) were obtained at a growth temperature of 195°C, consistent with the results of PL intensity. These results indicate that the electrical and the optical properties of the AZO films were significantly affected by the growth temperature. From the findings of this study, we believe that the electrical and the optical properties of AZO films can be significantly improved by increasing the crystal domain size of AZO films.
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