Abstract
Self-assembled ZnO nanorods have been synthesized on a seeded Si substrate by a simple chemical bath deposition method at a temperature of 80°C. Room-temperature photoluminescence analysis revealed material of high optical quality with a low density of defects that can be reduced by post growth annealing. Current–voltage measurements on these devices showed excellent rectification. Junction characteristics were also studied using capacitance–voltage measurements and showed that the junction characteristics are mainly determined by the properties of the p-Si substrate. Based on the energy band diagram and possible interface states at the junction, it was suggested that the current transport in the device is predominantly determined by hopping of charge carriers between localized states through a multi-step tunneling process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
