Abstract
In this study, dielectric chromium trioxide (CrO3) metal oxide film layer was prepared by the spin coating method on Si wafer. It was estimated the optical parameters like the absorption coefficient (α), refractive index (n), extinction coefficient (k), complex dielectric permittivity and optical conductivity (σopt) as a function of the wavelength by means of the transmittance (T) and reflectance (R) data. In addition, the dielectric behavior of Al/CrO3/p-Si device was analyzed in a large frequency region (10 kHz-1 MHz) using admittance (Y = G + iωC) spectroscopy. Dielectric characteristics including dielectric constant (ε′), dielectric loss (ε"), and loss tangent (tanδ) showed high values at small frequency part and low values at huge frequency part. Aside from that, the value of AC electrical conductivity (σac) rises with the rise in frequency as well. The results show the prepared film and device may be used in photovoltaic and electronic device applications.
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