Abstract
Crystals of 1,3,6,8-tetrakis(4′-methoxycarbonylphenyl)pyrene (383 µm × 36 µm) were successfully obtained on a substrate by a heat-melt and recrystallization method. The crystals showed the photoluminescence (PL) spectra with clear vibronic structures, which indicates a lack of direct π–π interaction between pyrene cores. Polarized PL spectra suggested strong reabsorption of the crystals. Field-effect transistors (FETs) having a bottom-gate bottom-contact structure were fabricated using the polycrystals as an active layer. These devices showed p-type characteristics with the maximum carrier mobility of 2.1 × 10−6 cm2 V−1 s−1 in the linear region and 5.1 × 10−6 cm2 V−1 s−1 in the saturation region. The fabricated FET showed light emission under applying higher voltages (VGS = −185 V, VDS = −162 V) just before breaking down.
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