Abstract
Rolled-up semiconductor tubes of various diameters made of alternating In0.215Ga0.785As/GaAs layers have been investigated by means of Raman scattering. The optical and acoustic phonon modes of individual tubes have been studied and compared with the characteristics of the surrounding material. After tube formation, the frequency of the phonon modes shifts with respect to the as-grown material and disorder activated modes are observed. The frequency shifts are related to the residual strain in the tubes through the deformation potential approximation. Good agreement with atomistic valence force field simulations and x-ray micro-diffraction measurements is found. By comparison with x-ray data, a Raman strain constant K = 0.65 is proposed for In0.215Ga0.785As. In the low frequency range, acoustic mode doublets are observed on the tubes that are absent in the surrounding material. They show clear evidence of the formation of periodic superlattices after the rolling-up process, and give insight into the quality of their interfaces.
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