Abstract
We deposited germanium carbide (GeC) thin films by Pulsed Laser Deposition (PLD) technique. Plasma plume created in PLD makes it possible to grow GeC thin film at room temperature. Thick-ness and optical constants were measured using spectroscopic ellipsometer (SE) in Ultraviolet-Visible range. Relationship between optical constants with methane gas pressure was analyzed. X-ray Photoelectron Spectroscopy (XPS) was used for compositional analyses. It is observed that higher pressure of methane gas for the growth of GeC by PLD is responsible for carbon agglomera-tion at the surface of the film. Moreover, the tunability of the band gap was observed from 1.6 to 2.8 eV with the pressure of methane gas.
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