Abstract
Optical memory functions in electroluminescence(EL)-emissive porous silicon (PS) diodes are described. The experimental PS diode is composed of an indium tin oxide (ITO) film, a PS layer, a p-type Si substrate and an Ohmic back contact. The PS layer was treated by rapid thermal oxidation (RTO) process. The RTO-PS diode shows stable on- and off-states which can be controlled by external bias voltages. The device can also store the optical information, and the stored information is erasable by photoillumination, since the bistable memory effect is based on field-induced hole injection and ejection into and from silicon nanocrystallites. The amount of the stored holes can be controlled by the incident light. The optical accessibility observed here suggests that the PS diode operates as a pixel-free image storage device.
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