Abstract
Silicon-rich hydrogenated silicon nitride thin films (a-SiN<sub>x</sub>:H) characterized with amorphous silicon cluster separations are deposited by helicon wave plasma-enhanced chemical vapor deposition technique. The optical absorption properties of the deposited films are obtained and analyzed from both light transmittance and reflectance measurements. A trend of blue shift of the exponential tail absorption region is observed with increasing nitrogen content x and the optical gap E<sub>g</sub>, the Tauc coefficient B and the Urbach parameter EU have been discussed in terms of the compositional and structural characteristics of the deposited films. It is concluded that the separation of amorphous silicon particles from the a-SiN<sub>x</sub>:H matrices leads an increasing trend of more disorder microstructure presenting as the features of large EU and small B compared with normal films, especially, the blue shift of the optical absorption edge and the widening of the optical band gap correlated with a three-dimensional quantum confinement effect of amorphous silicon nano-particles is suggested for the films with higher x.
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