Optical absorption properties in multi-layer InGaN/GaN core-shell quantum dots: The influences of ternary mixed crystal effect and hydrogen-like impurity

Abstract

Based on the effective mass approximation and the compact density matrix theory, the electronic states and optical absorption properties of intersubband transitions between the conduction-band energy levels in zinc blende InGaN/GaN/InGaN/GaN core-shell quantum dots (CSQDs) are investigated by using the finite difference method. The effects of hydrogen-like impurity and In component on the wave functions, transition energies, and optical absorption properties are discussed in detail. The results show that hydrogen-like impurity can cause the peak positions of optical absorption coefficients (OACs) and refractive index changes (RICs) to move to high energy area, and the peak values of OACs rise. Increasing In component of InGaN crystal in the core region of a CSQD has the same effect. But an opposite tendency will be found when increasing In component in the shell-well of a CSQD, i.e. optical absorption peaks move to low energy area and their values decrease. Comparing to the shell-well, the core region has more powerful confinement effect on electrons. So the better absorption properties are more likely to be obtained for this type of multi-layer InGaN/GaN CSQDs when In component in the core is larger than that in the shell-well.