Optical Absorption of SiC, BN, and BeO Nanosheets in Holstein Model

Abstract

By applying the full π-band Holstein model, we analytically have calculated the electronic density of states (DOS) and optical conductivity of doped gapped graphene-like structures including silicon carbide (SiC), boron nitride (BN), and beryllium monoxide (BeO) beyond the Dirac cone approximation. We have implemented the Kubo linear response formalism which is established to get the retarded self-energy here. For strong electron-phonon (e-ph) coupling strengths, an addition peak in the optical conductivity has been found, associated with transitions between the midgap states and the Van Hove singularities of the main π-bands. Optical conductivity (optical absorption) decreases (increases) with the gap which is useful in the fabrication of low-dimensional-based solar cells. At large gaps, a clean sheet of doped graphene has a zero optical conductivity at low energies because of the optically interband excitations through the Dirac points. Also, the Drude weight remains unchanged for all cases at low energy regimes. Consequently, DOS and optical conductivity remain constant with temperature at low e-ph interaction strengths.