Abstract
A study of the optical absorption of single crystal silicon thin films (0.1-0.4μm thick), grown heteroepitaxially on sapphire substrates and irradiated with different doses of neon and krypton ions at room temperature, has been undertaken as a function of ion dose in the photon energy interval 1.5-3.0 eV. The change in absorptivity is sufficient for generating optical patterns of high contrast by irradiation of selected parts of the water.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.