Abstract
The absorption in Si1-xGex/Si multiple quantum-well structuresis measured. Several separated well absorption peaks corresponding toboth intersubband and intervalence band transitions in the samples areobserved. In the normal incidence, two broadband peaks are attributed tointervalence band transitions HH0-SO0(2.5 µm),HH0-LH0(~3 µm), respectively. Using 45° incidenceof unpolarized light, both the intervalence band andintersubband transitions are observed. The intervalence band transitions(HH0-LH0) are Ge composition dependent, but the intersubbandtransitions, HH0-HH1(5.9 µm) and HH0-HH2(4.3 µm), are not sensitive to the Ge composition.
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