Abstract
The optical absorption of heavily doped and closely compensated Ge is calculated using a Halperin-Lax band-tail model and an ad hoc matrix element. The only adjustable parameter is an effective temperature ${T}_{\mathrm{ion}}$ for the contribution of the position correlations of the ions to the screening; ${T}_{\mathrm{ion}}$ is estimated to be about 7000 \ifmmode^\circ\else\textdegree\fi{}K. The results are in reasonable agreement with experiment; direct transitions at $k=0$ make the dominant contribution to the edge.
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