Abstract

The optical absorption near the fundamental edge has been investigated for different types of doped and undoped cubic ZnSe crystals. Crystals grown from the vapour phase, with and without doping, and crystals grown by the chemical transport technique are compared. Results of absorption coefficient measurements made from 77 to 313 LK are discussed and it is shown that for undoped samples, the absorption tail is dominated by electrons-phonons interactions and Urbach's rule is nearly verified, whereas for doped samples the influence of defects is preponderant.

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