Abstract
Optical-absorption and photoluminescence (PL) spectra have been measured on the defect-chalcopyrite-type semiconductor CdGa2Te4 in the 0.9–1.5-eV photon-energy range at temperatures between 11 and 300K. The temperature dependence of the direct-gap energy of CdGa2Te4 has been determined from the optical-absorption spectra and fit using the Varshni equation and an analytical four-parameter expression developed for the explanation of the band-gap shrinkage effect in semiconductors. The PL spectra show an asymmetric emission band peaking at ∼1.326eV and a symmetric emission band at ∼1.175eV at T=11K, which are attributed to donor-acceptor-pair recombination between exponentially tailed or Gaussian-like donor states and acceptor levels, respectively. A multiple-exponential fit analysis of the PL emission suggests acceptor levels of 50 and 86meV and a deep donor level of 190meV, together with an unidentified shallow level of 9meV. An energy-band scheme has been proposed for the explanation of PL emission observed in CdGa2Te4.
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