Abstract
Microcrystalline silicon (μc-Si) films, having different crystalline fractions (fc) and thicknesses, were deposited on glass by plasma enhanced chemical vapor deposition (PECVD) starting from a SIF4/H2/He gas mixture. The absorption coefficient (α) in the energy range 0.8–2.0 eV was evaluated from the standard constant photocurrent method (S-CPM) and dark conductivity measurements have been performed. The S-CPM data elaboration was carried out according to the Favre approach, in order to take account for the bulk scattering. The true α(αtrue) vs. energy trend was interpreted to evidence defect density and the crystalline-amorphous fraction of the samples. However, no thickness effect on the αtrue coefficient was observed, whereas the change in crystalline fraction resulted in different scattering effects.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
