Abstract
An extensive study of the recently observed opposite-channel-based injection (OCBI) of hot-carriers in SOI MOSFET's is carried out by PISCES numerical calculations. The study reveals similar patterns of injection for partially-depleted (PD) and fully-depleted (FD) devices, although there are significant quantitative differences. Important differences also exist when stressing the device with the body floating versus body grounded. The results demonstrate that when stressing one channel, carriers can and are injected into the opposite gate. The results also demonstrate that under appropriate bias conditions pure electron/hole injection takes place, and establish these conditions. The practical significance of this ability to inject only electrons or only holes in any desired sequence is illustrated by exploiting it to investigate the time-power law of interface state generation and to design a SOI EEPROM cell with a back channel based erasing scheme.
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