Abstract
Resistive switching is an important property for the applications of next generation nonvolatile resistance random access memories. In this paper, opposite resistive switching characteristic were found in epitaxially grown (Ba0.6Sr0.4)TiO3 thin films with device structure of Pt/Ti/BSTO/Ir and Pt/Ti/BSTO/Pt. Bipolar resistive switching properties with excellent durablility and reproducibility were obtained in the both devices. Results suggest that the electrode plays an important role in the process. In the device of Pt/Ti/BSTO/Ir, the oxidation and reduction of IrOx–Ir and TiOx–Ti lead to the RS process and in the device of Pt/Ti/BSTO/Pt the oxidation and reduction of TiOx–Ti lead to the RS process.
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