Abstract
This chapter reviews the progress and current critical issues on the integration of germanium (Ge) surface channel MOSFET devices as well as strained Ge buried channel MOSFET structures. The device design and scalability of the strained Ge buried channel MOSFETs are discussed based on our recent results. CMOS compatible integration approaches of Ge channel devices are presented.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
