Abstract
Recent breakthroughs in bulk crystal growth of β-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area β-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film β-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of β-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
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