Abstract
In this paper the thermoelectric properties–the Seebeck coefficient, the electrical conductivity and the power factor – of GaN and InGaN thin films grown by Metal Organic Vapor Deposition (MOCVD) are reported. The Seebeck coefficient and power factor of InGaN decreases with increasing indium content, although the electrical conductivity shows an inverse behavior. P-type doped samples demonstrated the highest Seebeck coefficient (637 μV/K in GaN:Mg, 1200 μV/K in InGaN:Mg) but the lowest power factor (0.1x10 -4 W/m-K for GaN:Mg, 0.4x10 -4 W/m-K for InGaN:Mg). The Seebeck coefficient of the doped GaN thin films decreased linearly with log of the carrier concentration. GaN:Si exhibited a maximum power factor of 9.1x10 -4 W/m-K with a carrier concentration of 1.6x10 18 cm -3 , and In 0.1 Ga 0.9 N exhibited a maximum power factor of 109x10 -4 W/m-K with a carrier concentration of 1.2x10 18 cm -3 . The results also indicate that GaN and InGaN-based materials could potentially be useful materials for TE applications at high temperatures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
