Abstract
SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications.
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