Abstract
Arrays of silicon sensors can be used in those spectroscopic applications where a high event throughput is needed, for example, in synchrotron-based experiments. However, in such arrays, several noise contributions, beyond the well-known leakage, thermal, and flicker noises, can be present, which are absent in single-channel detectors. Additional noise is generated ultimately by the condition at the silicon/silicon-oxide interface, which in turn depends on the parameters of the silicon oxide over the not-implanted gaps. We discuss how to control this region to obtain the best spectroscopic performances.
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