Abstract
A thin-film thermoelectric generator composed of p- and n-type poly-Ge1−xSnx (x ∼ 0.02) on a Si(001) covered with SiO2 has been successfully fabricated by low thermal budget processes (under 300 °C) and demonstrated for the first time. Both the crystallization and dopant activation were simultaneously performed using pulsed UV laser irradiation in flowing water. A recorded activation ratio of Sb in the poly-Ge1−xSnx enabled a relatively high power factor (9.2 μ Wcm−1 K−2 at RT), which is comparable to the counterparts of n-type Ge1−xSnx layers epitaxially grown on InP(001).
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