Abstract
Photoconductive antennas deposited onto GaAs substrates that incorporate InAs quantum dots have been recently shown to efficiently generate both pulsed and CW terahertz radiation. In this Letter, we determine the operational limits of these antennas and demonstrate their extreme thermal breakdown tolerance. Implanted quantum dots serve as free carrier capture sites, thus acting as lifetime shorteners, similar to defects in low-temperature grown substrates. However, unlike the latter, defect-free quantum-dot structures possess perfect lattice quality, thus not compromising high carrier mobility and pump intensity stealth. Single gap design quantum dot based photoconductive antennas are shown to operate under up to 1 W of average pump power (∼1.6 mJ cm−2 energy density), which is more than 20 times higher than the pumping limit of low-temperature grown GaAs based substrates. Conversion efficiency of the quantum dot based photoconductive antennas does not saturate up to 0.75 W of pump power (∼1.1 mJ cm−2 energy density). Such a thermal tolerance suggests a glowy prospect for the proposed antennas as a perspective candidate for intracavity optical-to-terahertz converters.
Highlights
The larger constituent of such setups is usually the pump source—a Ti:sapphire or ultrafast fibre laser
Photoconductive antennas deposited onto GaAs substrates that incorporate InAs quantum dots have been recently shown to efficiently generate both pulsed and CW terahertz radiation
Single gap design quantum dot based photoconductive antennas are shown to operate under up to 1 W of average pump power ($1:6 mJ cmÀ2 energy density), which is more than 20 times higher than the pumping limit of low-temperature grown GaAs based substrates
Summary
The larger constituent of such setups is usually the pump source—a Ti:sapphire or ultrafast fibre laser. Photoconductive antennas deposited onto GaAs substrates that incorporate InAs quantum dots have been recently shown to efficiently generate both pulsed and CW terahertz radiation.
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