Abstract
The characteristics of NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 heterojunction lateral geometry rectifiers with the epitaxial layers grown by metal organic chemical vapor deposition were measured over a temperature range from 25 °C–225 °C. The forward current increased with temperature, while the on-state resistance decreased from 360 Ω.cm2 at 25 °C to 30 Ω.cm2 at 225 °C. The forward turn-on voltage was reduced from 4 V at 25 °C to 1.9 V at 225 °C. The reverse breakdown voltage at room temperature was ∼4.2 kV, with a temperature coefficient of −16.5 V K−1. This negative temperature coefficient precludes avalanche being the breakdown mechanism and indicates that defects still dominate the reverse conduction characteristics. The corresponding power figures-of-merit were 0.27–0.49 MW.cm−2. The maximum on/off ratios improved with temperature from 2105 at 25 °C to 3 × 107 at 225 °C when switching from 5 V forward to 0 V. The high temperature performance of the NiO/β-(Al0.21Ga0.79)2O3/Ga2O3 lateral rectifiers is promising if the current rate of optimization continues.
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