Abstract
Hybrid organic-inorganic metal-base transistors with C60 fullerene emitter, metallic polymer base layer, and n-Si collector are straightforward to fabricate and show common-base current gains up to 1.0. Ag contacts to the C60 layer and a reduction in the latter’s thickness lead to a significant performance improvement compared to previously reported devices. Two-terminal electrical measurements suggest that the devices function by charge transfer across a rectifying C60∕Si junction formed in naturally occurring holes in the base layer and confirm the presence of barriers at the C60/metal and metal/Si junctions.
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