Abstract
The definition of sub-20 nm electronic devices for the newest generation of smart phones, computer and automotive is calling for very innovative FEOL wet chemical cleans. The electronic properties are very sensitive, in respect of the surface morphology on a Si-wafer. Most of the modern wet cleans are based on the RCA-clean [1]. Innovative cleans, like for example the IMEC-clean [2] and modified RCA clean were developed, using ozone-DIW mixture (O3-DIW), in order to improve the cleaning performance [3], [4]. Since several years electrolyzed water (EW) is used in semiconductor manufacturing [5]. An electrochemical reaction is induced by an electrode and a small amount of ammonia hydroxide (NH4OH) or ammonia sulfate and DIW [7].
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