Abstract
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current.
Highlights
Tunneling field-effect transistors have been studied as an alternative device for silicon MOSFET enabling very sharp turn-on which is required to reduce the operation voltage and the system power consumption. tFETs utilize band-to-band tunneling (BTBT) from a source to a channel, and an off-current is maintained using a P-N-N or N-P-P-type channel-doping profile [1,2,3,4,5]
When BTBT is not possible, the carrier cannot be injected into the drain because of the barrier formed in the channel region
The performances of experimental tunnel FETs reported in the literature have not reached their theoretical limit, primarily due to graded doping profiles and interface traps [3,6]
Summary
Tunneling field-effect transistors (tFETs) have been studied as an alternative device for silicon MOSFET enabling very sharp turn-on which is required to reduce the operation voltage and the system power consumption. tFETs utilize band-to-band tunneling (BTBT) from a source to a channel, and an off-current is maintained using a P-N-N or N-P-P-type channel-doping profile [1,2,3,4,5]. Tunneling field-effect transistors (tFETs) have been studied as an alternative device for silicon MOSFET enabling very sharp turn-on which is required to reduce the operation voltage and the system power consumption. TFETs utilize band-to-band tunneling (BTBT) from a source to a channel, and an off-current is maintained using a P-N-N or N-P-P-type channel-doping profile [1,2,3,4,5]. When BTBT occurs in this channel-doping profile, the carriers from the source are injected directly into the channel and transported to the drain.
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