Abstract
Complete CMOS integrated circuits grown by Si molecular beam epitaxy (MBE) are discussed. The morphology of the MBE films and the electrical performance of the CMOS transistors were investigated. The CMOS time-keeping circuits work after an MBE process. Indications of radiation damage (threshold shift up to 200 mV) induced by the Si electron-beam evaporator at epitaxial temperatures of 550 degrees C are observed. These are completely gone at 750 degrees C, at which temperature virtually no effect of the MBE process on the CMOS characteristics could be determined. The observed compatibility of Si-MBE with CMOS ICs is an important prerequisite for the monolithic integration of Si-based devices with the complexity level provided by MOS technologies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
