Abstract
ABSTRACTThe HfO2-based resistive random access memory (RRAM) is one of the most promising candidates for non-volatile memory applications. The detection and examination of the dynamic behavior of oxygen ions/vacancies are crucial to deeply understand the microscopic physical nature of the resistive switching (RS) behavior. By using synchrotron radiation based, non-destructive and bulk-sensitive hard X-ray photoelectron spectroscopy (HAXPES), we demonstrate an operando diagnostic detection of the oxygen ‘breathing’ behavior at the oxide/metal interface, namely, oxygen migration between HfO2 and TiN during different RS periods. The results highlight the significance of oxide/metal interfaces in RRAM, even in filament-type devices.
Highlights
Resistive switching (RS) behavior in a simple metalinsulator-metal (MIM) structure has attracted intensive interests, initially for the non-volatile memory and logic applications [1] and has recently been extended to memristive devices and neuromorphic computing applications, e.g. synapse emulators [2], to realize logicin-memory concepts [3]
It is widely accepted that filament-type valence change memories (VCMs) showing resistive switching (RS)-independence of cell area are superior for the device scaling [6]
We present an operando investigation of the material property modification of the Pt/HfO2/TiN MIM system at each resistance state during the RS process
Summary
Resistive switching (RS) behavior in a simple metalinsulator-metal (MIM) structure has attracted intensive interests, initially for the non-volatile memory and logic applications [1] and has recently been extended to memristive devices and neuromorphic computing applications, e.g. synapse emulators [2], to realize logicin-memory concepts [3]. Among the resistive random access memory (RRAM) candidates, valence change memories (VCMs) show a great potential thanks to their virtues such as non-volatile (106 s), fast ( < 10 ns) and low-power (1 pJ/bit) operation [4]. It is widely accepted that filament-type VCMs showing resistive switching (RS)-independence of cell area are superior for the device scaling [6]. Even for the filament-type devices, in-situ TEM observation and many other studies clearly demonstrate that the Supplemental data for this article can be accessed here.
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