Open questions regarding the mechanism of plasma-induced deposition of silicon

Abstract

Recently published values of the rate constant for the insertion of silylene into silane have been used to reevaluate our earlier estimates of the critical coil cell ration of silane, [SiH4]crit above which the formation of disilane dominates the plasma-induced deposition of silicon. Because the recently published values of the rate constant are significantly higher than those available at the time of writing of our earlier paper, the new values on [SiH4]crit are significantly lower than the earlier ones. It is shown that there is no unambiguous experimental evidence for SiH3 to be the dominant species for the deposition of crystalline .silicon. Disilane formation and insertion of silylene into the surface o the growing filin mar explain the data as well. Several open questions are addressed.