Abstract
An open photo-acoustic cell was used to measure the thermal diffusivity (TD) of silicon by photo-acoustic technique. The samples were heated for a period 3 h to perform sample annealing at 960, 1050, 1200 and 1300 °C in air. The TD of Si coated-silver (Ag/n-Si) was measured by fitting experimental data for the equation thermally thick in (RG) theory. For uncoated silver n-Si (single layer) samples, the TD can be obtained by fitting experimental data and by finding the intersection of the thermal thin and thermal thick (critical frequency fc). It was found that when the annealing temperature was increased, the TD of the (n-type Si) samples was also increased. However, at a temperature of 1050 °C, the TD value of the Ag/n-Si samples was found to be 2.93 cm2 s−1. Beyond this point TD showed a degrading behavior due to a complete silver melting on silicon surface.
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