Abstract
We present homojunction and μc-Si/a-Si:H/c-Si heterojunction silicon solar cells fabricated by PECVD. The H 2 dilution used during the i-layer growth strongly affects the device efficiency. While intermediate H 2 dilution of the gas mixture results in V oc degradation, the best V oc is obtained under zero or very high (=99.4%) H 2 dilution, resulting in totally amorphous or epitaxial i-layer respectively. A maximum value of 638 mV, with 13.7% efficiency, is observed in the case of an amorphous i-layer, indicating an improvement of interface quality. If the i-layer is deposited using a 99.4% H 2 dilution, a 608 mV V oc is observed and for homojunction solar cells a 13.1% efficiency is obtained.
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