Abstract
Cu(In,Ga)Se/sub 2/ thin films from a pilot/production line with nominal 12% module efficiency have been analyzed by confocal photoluminescence with lateral submicron resolution. We translate photoluminescence data into energetic splitting of the quasi-Fermi levels which indicates the maximum achievable open circuit voltage of hypothetic finally processed heterojunctions. We see lateral variations of the pl-yield in these polycrystalline chalcopyrites up to a factor 6 that at 70 K corresponds to an alteration of the minority quasi-Fermi level of about 11 meV. Even in heterojunctions (TCO / CdS / CIGS / Mo) despite the equipotential surface of the TCO we find a comparable lateral variation of the separation of the quasi-Fermi levels. The comparison of laterally resolved PL-data with simultaneously recorded optical reflection exhibits the granularity of the CIGS surface and shows substantially higher spatial frequencies compared to luminescence patterns.
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