Abstract
A two-dimensional on-state analytical model of the insulated gate bipolar transistor (IGBT) with local lifetime control is developed. The model accounts for the effect of local lifetime killing in particular the effective value of the lifetime and the position of the local lifetime control region on the excess carrier distribution in the IGBT during its on-state operation. It is shown that the local lifetime killing in the vicinity of the anode junction causes a reduction in the anode injection efficiency leading to improved on-state/turn-off behavior. The accuracy of the analytical model is verified through numerical simulations carried out using the MEDICI device simulator.
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