Abstract
AbstractWe present cross‐sectional scanning tunneling microscopy results on GaSb nanostructures in GaAs, analyzing their shape, size and chemical composition. By comparing different quantum wells and quantum dot layers, grown both by metalorganic chemical vapor deposition and by molecular beam epitaxy, the onset of quantum dot evolution is studied. Quantum dots are found already after a deposition of 1 monolayer GaSb. Intermixing of the deposited GaSb with GaAs due to anion exchange as well as different effects of Sb segregation during overgrowth are demonstrated. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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