Abstract
In this brief, anomalous hot-carrier degradation phenomenon in n-type superjunction lateral DMOS transistors on a SOI substrate is investigated. An unexpected on-resistance (Ron) decrease was observed at the beginning of stress, but Ron increases with the stress time. The reason was analyzed with the 3-D simulation of electrical field and impact ionization generation. The injection of hot holes into the field oxide near the drain region leads to the Ron decrease during the early stress period. With the increase of stress time, trapped hot holes accumulated in the field oxide and act as electron defects to trap electrons, altogether with hot electrons trapped in gate oxide above the accumulation region, contributing to Ron increase.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
