Online junction temperature monitoring using turn-off delay time for silicon carbide power devices

Abstract

Junction temperature is a critical indicator for health condition monitoring of power devices. Concerning the reliability of emerging silicon carbide (SiC) power semiconductors due to immaturity of new material and packaging, junction temperature measurement becomes more significant and challenging, since SiC devices have low on-state resistance, fast switching speed, and high susceptibility to noise and parasitics in circuit implementations. This paper aims at developing a practical and cost-effective approach for online junction temperature monitoring of SiC devices using turn-off delay time as the thermo-sensitive electrical parameter (TSEP). The sensitivity is analyzed for fast switching SiC devices. A gate impedance regulation assist circuit is designed to improve the sensitivity by a factor of 60 and approach hundreds of ps/°C in the case study with little penalty of the power conversion performance. Also, an online monitoring system based on three gate assist circuits is developed to monitor the turn-off delay time in real time with the resolution within hundreds of ps. In the end, the micro-controller is capable of “reading” junction temperature during the converter operation with less than 0.5 °C measurement error. Two testing platforms for calibration and online junction temperature monitoring are constructed, and experimental results demonstrate the feasibility and accuracy of the proposed approach. Furthermore, the proposed gate assist circuits for sensitivity improvement and high resolution turn-off delay time measurement are transistor based and suitable for chip level integration.