Abstract
This paper proposes a novel method for online junction temperature measurement of silicon carbide metaloxide-semiconductor field-effect transistors (SiC MOSFETs). The measurement method is using the miller plateau voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf> ) and source leakage current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> ) at transient inrush currents during turn-on process that based on the temperaturesensitive electrical parameters measurement method (TSEP). The comparison of infrared temperature measurement results shows that this method can provide more accurate junction temperature results and also can be used for transient junction temperature measurement in SiC MOSFET devices. It solves the problem that the traditional temperature-sensitive electrical parameter measurement method is difficult to measure the transient temperature rise. Finally, the results show that the use of V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf> and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> can provide more accurate junction temperature results which can be used for transient junction temperatures in SiC MOSEFT devices.
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